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Dr. Jie Zhang is presently an assistant professor in the School of CHIPS, Taicang campus, Xi'an Jiaotong-liverpool University.

Jie Zhang received her BSc degree from Jilin University in 2014. Then, she completed her PhD degree in 2019 from Peking University.In 2019-2023, Jie Zhang had a four-year postdoctoral experience in Hong Kong University of Science and Technology and Fudan University.

Her main research interests include wide-bandgap semiconductor materials and devices.

Qualifications
- Post-Doc., Academy for Engineering & Technology, Fudan University, -2023
- Post-Doc., Department of Electronic & Computer Engineering , The Hong Kong University of Science and Technology, -2021
- Ph.D., Peking University , - 2019
- B.Sc., Jilin University,-2014
Experience
- Assistant Professor, Xi'an Jiaotong-Liverpool University - 2023 to present
Research interests
- Wide-bandgap semiconductor materials
- Semiconductor devices
Articles
- J. Zhang, X. L. Yang，B. Shen, et al. Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates, AIP Advances,13, 025250 (2023)
- W. Song#, J. Zhang #, K. J. Chen, et al. GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion, AIP Advances, 12, 045125 (2022)
- J. Zhang, X. L. Yang，B. Shen，et al. Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates, Phys. Rev. Materials 4, 073402 (2020)
- J. Zhang, X. L. Yang, B. Shen, et al. Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality, Appl. Phys. Lett. 110, 172101 (2017)
- F. Wu, J. Zhang, H. Ma, Q. Zhang, et al. Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC, Applied Surface Science 613, 156014 (2022)
- L. Gua, H. P. Ma, Y. Shen, J. Zhang, W. J. Chen, et al. Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition, Journal of Alloys and Compounds 925, 166727 (2022)
- Y. L. Zhang , P. F. Liu, J. Zhang, Hong-Ping Ma, et al, 1.2-kV 4H-SiC JBS Diodes Engaging P-Type Retrograde Implants, IEEE Trans Electron Devices, 69, 12 (2022)
- G. Lyu, J. Wei, T. Chen, J. Zhang, K. J. Chen, Substrate and Trench Design for GaN-on-EBUS Power IC Platform, IEEE Trans Electron Devices, 69, 7 (2022).
- G. Lyu, J. Wei, W. J. Song, Z. Y. Zheng, L. Zhang, J. Zhang, Y. Cheng, S. R. Feng, Y. H. Ng, T. Chen, K. L. Zhong, J. P. Liu, R. Zeng and Kevin J. Chen, A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs, IEEE International Electron Devices Meeting (IEDM), 2021.
- Y. X. Feng, X. L. Yang, Z. H. Zhang, D. Kang, J. Zhang, K. H. Liu, X. Z. Li, J. F. Shen, F. Liu, T. Wang, P. F. Ji, F. J. Xu, N. Tang, T. J. Yu, X. Q. Wang, D. P. Yu, W. K. Ge, and Bo Shen, “Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene”, Adv. Funct. Mater. 1905056 (2019).
- S. Wu, X. L. Yang, H. H. Zhang, L. Shi, Q. Zhang, Q. Y. Shang, Z. M. Qi, Y. Xu, J. Zhang, N. Tang, X. Q. Wang, W. K. Ge, K. Xu, and B. Shen, “Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN”, Phys. Rev. Lett. 121, 145505 (2018).
- J. P. Cheng, X. L. Yang, J. Zhang, A. Q. Hu, et al,“Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor”, ACS Applied Materials & Interfaces 8, 34108 (2016)
Proceedings
- J. Zhang, X. L. Yang, J. P. Cheng, Y. X. Feng, B. Shen, et al, Growth of InAlGaN/GaN heterostructures by interface control, The 2nd National Conference on Wide-Band-Gap Semiconductors, Qinghai, China, Aug. 10th- 12th, 2017
- J. Zhang, X. L. Yang, J. P. Cheng, Y. X. Feng, B. Shen, et al, Effects of silicon substrate misorientations on GaN surface morphologies, The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2017), Qingdao, China, Sep.24th- 27th, 2017
- J. Zhang, X. L. Yang, J. P. Cheng, et al, Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates. The 12th International Conference on Nitride Semiconductors (ICNS 12), Strasbourg, France, Jul. 24th- 28th, 2017
- .International Workshop on Nitride Semiconductor (IWN 2018), Kanazawa, Japan, Nov. 11th- 16th, 2018
Chapters, cases, readings and supplements
- J. Zhang, et al, An epitaxial growth method of GaN HEMTs. 202222359329.X
- J. Zhang, et al, An epitaxial growth method of high-quality GaN films. 202222359335.5.
- X. L. Yang, B. Shen, J. Zhang, et al, An epitaxial growth method of InxAlyGa1-x-yN/GaN heterostructures. CN106601787A.
- X. L. Yang, B. Shen, J. F. Shen, J. Zhang, et al, An epitaxial growth method of high-quality thick AlN films on nano-patterned Si substrates. CN109103070B
- X. L. Yang, B. Shen, A. Q. Hu, J. Zhang, et al, A method and structure for detecting trap states in GaN-based heterostructures. CN105466970A.
- X. L. Yang, B. Shen, Y. X. Feng, J. Zhang, et al, An epitaxial growth method of single-crystalline GaN film on Si(100) substrates. CN108878265B.
- X. L. Yang, B. Shen, Y. X. Feng, J. Zhang, et al, An epitaxial growth method of single-crystalline GaN film on polycrystal or amorphous crystal. CN108878266B .
Conference presentations
- J. Zhang, X. L. Yang，Y. X. Feng，et al, Growth of Continuous 8 µm-thick GaN Layers on Si Substrates: Effect of Dislocation Filtering Layer on Strain Relaxation,International Workshop on Nitride Semiconductor (IWN 2018), Kanazawa, Japan, Nov. 11th- 16th, 2018 (Oral)
Grants
- Principle investigator, China Postdoctoral Science Foundation, 80k, 2022-2023
- Key participant, National Natural Science Fund of China Research Fund for International Senior Scientists, 2021-2024
- Key participant, National High-tech R&D Program of China (863 Program)，2015-2017
- Key participant, National Key Research and Development Program of China, 2017-2021
Courses taught
- MES205TC, Digital Electronics II
Awards and honours
- 2021 Super postdoctor in Fudan University
- 2018 National scholarship in Peking University

电话
+86 (0)51289167680
电子邮件
Jie.Zhang06@xjtlu.edu.cn
地址
A-4075(TC Campus-Building A)
Suzhou Dushu Lake Science and Education Innovation District
Suzhou Industrial Park
Suzhou
P.R.China
215123

Jie ZhangPH.D

Profile

Qualifications

Experience

Research interests

Articles

Proceedings

Chapters, cases, readings and supplements

Conference presentations

Grants

Courses taught

Awards and honours