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Miao Cui received her B.S. degree in Materials Physics from Sichuan University in 2008. In 2011, she got her M.S. degree in Materials Physics and Chemistry from Chinese Academy of Sciences (SINANO), Suzhou, China. From 2011 to 2015, she was a process engineer in Lam Research Corporation, Shanghai, China. From 2015-2017, She joined in Xi’an Jiaotong University Suzhou Academy as a lab assistant.

Miao received her PhD degree in Microelectronics from University of Liverpool in 2021. She has been focused on fabrication and characterization of semiconductor devices, including CMOS devices, GaN LEDs, GaN power devices and integrated circuits (ICs). Her current research interests are GaN power devices and integration technology.

Qualifications
- Ph.D, University of Liverpool, -2021
- M.S., Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, -2011
- B.S., Sichuan University, -2008
Experience
- Lecturer, Xi'an Jiaotong-Liverpool University, -2021 to present
- Lab assistant, Xi'an Jiaotong University Suzhou Academy, -2015 to 2017
- Process Engineer, Lam Research Corporation (China), - 2011 to 2015
Articles
- Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C, Liang*, Cezhou Zhao*, “Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High temperature DC-DC Buck Converters”. IEEE Access, vol. 7, p. 184375, 2019.
- Miao Cui, Qinglei Bu, Yutao Cai, Ruize Sun, Wen Liu, Huiqing Wen, Sang Lam, Yung C. Liang, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao*, “Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters”, Japanese Journal of Applied Physics, vol. 58, no. 5, p. 056505, 2019.
- Ang Li, Miao Cui, Yi Shen, Ziqian Li, Wen Liu*, Ivona Z. Mitrovic, Huiqing Wen, Cezhou Zhao*, “Monolithic comparator and sawtooth generator of AlGaN/GaN MIS-HEMTs with threshold voltage modulation for high-temperature applications” IEEE Transactions on Electron Devices, 68(6), 2673-2679, 2021.
- Yutao Cai, Wen Liu, Miao Cui, Ruize Sun, Y. C. Liang, Huiqing Wen, Li Yang, S. N. Supardan, I. Z. Mitrovic, S. Taylor, P. R. Chalker, Cezhou Zhao*. “Effect of Surface Treatment on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices with Al2O3 Gate Dielectric,” Japanese Journal of Applied Physics, vol. 59, no.4, pp. 041001, 2019.
- Miao. Cui, Taofei Zhou*, Minrui Wang, Jun Huang, Jinping Zhang, Ke Xu*, Hui Yang, “Comprehensive thermal characterization using R-lines of sapphire and GaN E2-high mode from Raman spectra in high power flip-chip InGaN/GaN LEDs” J. Phys. D: Appl. Phys.44(2011)35101.
Proceedings
- Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Talyor, Paul R. Chalker, Cezhou Zhao*, “The impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters”, 2019 International Conference on IC Design and Technology (ICICDT), 17th -19th, June, Suzhou, China, 2019.
- Xueteng Li, Miao Cui, Wen Liu*, “A full GaN-integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters”. 2019 International Conference on IC Design and Technology (ICICDT), 17th-19th, June, Suzhou, China, 2019.
- Bohan Lu, Miao Cui, Wen Liu*, “The Impact of AlGaN Barrier on Transient Vth Shifts and Vth Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs”. 2019 International Conference on IC Design and Technology (ICICDT), 17th-19th, June, Suzhou, China, 2019.
- Miao Cui, Qinglei Bu, Yutao Cai, Ruize Sun, Wen Liu, Huiqing Wen, Sang Lam, Yung C. Liang, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao*, AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs based DC-DC Boost Converter with Integrated Gate Driver. 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia), 27th -30th, May, Busan, Korea, 2019.
- Miao Cui, Yutao Cai, Sang Lam, Wen Liu, Chun Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker and Cezhou Zhao*, “Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs”, Proc. 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC’18), Jun 6-8, 2018 , Shenzhen, P.R.China
Courses taught
- EEE337 Integrated Circuits – Concepts and Design

电话
+86 (0)51285186495
Email
Miao.Cui02@xjtlu.edu.cn
地址
SC344(SIP Campus-Science Building)
Suzhou Dushu Lake Science and Education Innovation District
Suzhou Industrial Park
Suzhou
P.R.China
215123

Miao CuiPH.D.

Profile

Qualifications

Experience

Articles

Proceedings

Courses taught